Wafer bonding of InP and GaAs: interface characterization and device applications

Author

Yang, L. ; Carey, K. ; Ludowise, M. ; Perez, W. ; Mars, D.E. ; Fouquet, J.E. ; Nauka, K. ; Rosner, S.J. ; Ram, R.J. ; Dudley, J.J. ; Babic, D.I. ; Bowers, J.

Author_Institution

Hewlett-Packard Co., Palo Alto, CA, USA

fYear

1994

fDate

27-31 Mar 1994

Firstpage

214

Lastpage

215

Abstract

Wafer bonding is a technique used to form a single hybrid solid from dissimilar materials by rearrangement of surface bonds. While the bonding of silicon-related material has been studied extensively, very little work was devoted to the III-V material system. We have successfully bonded InP and GaAs. In spite of the 3.7% lattice-mismatch, excellent material quality can be preserved less than 0.2 μm away from the bonded interface. Transmission electron micrograph (TEM), deep level transient spectroscopy (DLTS), electron beam induced current (EBIC), photoluminescence (PL) and optical reflection measurements were used to characterize the bonded interface, and consistent results were obtained

Keywords

EBIC; III-V semiconductors; deep level transient spectroscopy; gallium arsenide; indium compounds; interface structure; photoluminescence; semiconductor junctions; transmission electron microscope examination of materials; wafer bonding; 630 C; DLTS; EBIC; III-V material system; InP-GaAs; PL spectra; TEM; bonded interface; deep level transient spectroscopy; device applications; electron beam induced current; interface characterization; lattice-mismatch; optical reflection measurements; photoluminescence; surface bonds; transmission electron micrograph; wafer bonding; Electron beams; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Optical materials; Optical reflection; Photoluminescence; Solids; Spectroscopy; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328200

Filename

328200