1.55 μm tensile strained GalnNAs/InP laser diodes performances

Author

Messant, B. ; Boutillier, M. ; Gauthier-Lafaye, O. ; Bonnefont, S. ; Dagens, B. ; Alexandre, F. ; Carrere, H. ; Marie, X. ; Lozes-Dupuy, F.

Author_Institution

LAAS-CNRS, Toulouse

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

In this paper, the performance of GaInNAs/InP quantum well (QW) laser diodes emitting at 1.55 μm is reported. The measured and calculated modal gains are in good agreement for temperatures ranging from 20 to 80°C. Furthermore, the temperature evolution of calculated differential gain is in good agreement with the one deduced from relative intensity noise measurements. GalnNAs based laser diodes show good performances despite a recombination current dominated by Auger processes. Resonant frequencies larger than 4 GHz are measured with a differential gain of the order of 0.7 10^-15 cm² at room temperature.

Keywords

Auger effect; III-V semiconductors; MOCVD; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; laser noise; quantum well lasers; vapour phase epitaxial growth; Auger processes; GaInNAs-InP; buried ridge structure; differential gain; metalloorganic vapor phase epitaxy growth; modal gains; quantum well laser diodes; recombination current; relative intensity noise measurements; resonant frequency; temperature 20 °C to 80 °C; temperature 293 K to 298 K; tensile strained laser diodes; wavelength 1.55 μm; Diode lasers; Epitaxial growth; Gain measurement; Gallium arsenide; Indium phosphide; Noise measurement; Quantum well lasers; Spontaneous emission; Temperature distribution; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0930-3

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4385915

Filename

4385915