Investigation on the metal-clipping issue after FSG deposition

Author

Liu, Yan-ping ; Li, Fei

Author_Institution

Shanghai Hua Hong NEC Electron. Co. Ltd., Shanghai, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1242

Lastpage

1244

Abstract

Metal clipping issue was observed in semiconductor manufacturing, which will result in the electronic property failure of metal line. The process parameters of HDP FSG deposition were investigated in order to discover the mechanism of metal clipping. The results indicated that ion bombardment effect is the dominated factor for metal clipping, it also accelerate the chemical etch of F ions. According to the standard manufacturing procedure, several progresses were used to avoid the metal clipping issue successfully.

Keywords

dielectric materials; failure analysis; fluorine; integrated circuit manufacture; integrated circuit reliability; plasma materials processing; silicon compounds; sputter deposition; sputter etching; F ions chemical etching; HDP FSG deposition; electronic property failure; metal clipping; metal line; plasma ion bombardment; semiconductor manufacturing; sputter deposition; Chemical processes; Chemical vapor deposition; Manufacturing processes; National electric code; Plasma applications; Plasma chemistry; Semiconductor device manufacture; Sputter etching; Sputtering; Tin; FSG; metal clipping; semiconductor;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734773

Filename

4734773