• DocumentCode
    2149040
  • Title

    Dose Rate Effects on Bipolar Components

  • Author

    Toscano, F. ; Ouellet, A. ; Tilhac, F. ; Lagarrigue, T.

  • Author_Institution
    STMicroelectron. Co., Burlington, MA, USA
  • fYear
    2013
  • fDate
    8-12 July 2013
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    The TID Co60 Dose rate effects have been examined in bipolar transistors at high and low dose rates. The aim of the radiation tests is to study the ELDRs on NPN and SPNP elementary transistors.
  • Keywords
    bipolar transistors; ELDR; NPN elementary transistors; SPNP elementary transistors; TID Co60 dose rate effects; bipolar components; bipolar transistors; enhanced low dose rate sensitivity; high dose rates; radiation tests; total ionizing dose; Annealing; Companies; Integrated circuits; Radiation effects; Radiation hardening (electronics); Silicon; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2013 IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4799-1136-3
  • Type

    conf

  • DOI
    10.1109/REDW.2013.6658195
  • Filename
    6658195
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2149040