DocumentCode
2149212
Title
Three dimensional topography simulation model using diffusion equation
Author
Fujinaga, M. ; Kotani, N. ; Oda, H. ; Shirahata, M. ; Genjo, H. ; Katayama, T. ; Ogawa, T. ; Akasaka, Y.
Author_Institution
Mitsubishi Electr. Corp., Hyogo, Japan
fYear
1988
fDate
11-14 Dec. 1988
Firstpage
332
Lastpage
335
Abstract
An etching model for three-dimensional topography simulation is proposed in which the topography is deduced by solving the diffusion equation. A 3-D topography simulator called 3-D MULSS (multilayer shape simulator) has been developed on the basis of this model. Using this program, contact hole and trench etching was simulated exactly, and the computation was extremely fast.<>
Keywords
electronic engineering computing; etching; integrated circuit technology; 3D MULSS; contact hole etching; diffusion equation; etching model; multilayer shape simulator; three-dimensional topography simulation; trench etching; Computational modeling; Differential equations; Etching; Laboratories; Large scale integration; Ray tracing; Shape; Surface fitting; Surface topography; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1988.32824
Filename
32824
Link To Document