Electrical characterization of ultrathin single crystalline Gd2O3/Si(100) with Pt top electrode

Capacitor composed of single crystalline Gd₂O₃ on Si(100) with Pt top electrode was fabricated by molecular beam epitaxy. We present a systematic study of electrical properties of as-grown single crystalline Pt/Gd₂O₃/Si(100). Three capacitors with different thickness are used for electrical evaluation. The EOT of the samples are estimated to be 0.7 nm, 1.2 nm and 1.8 nm respectively. Work function of Pt on Gd₂O₃ is pinned at 4.75 eV and due to the lattice mismatch between Gd₂O₃, the interface state density is in the level of 10¹³ extracted by Terman and conductance methods.