• DocumentCode
    2149285
  • Title

    Thermally Controlled Coplanar Microwave Switches

  • Author

    Stotz, Michael ; Fritze, Stefan-Daniel ; Downar, Hartmut ; Wenger, Josef

  • Author_Institution
    DaimlerChrysler Research Center, Radar Systems Group (FT2/HR), D-89081 Ulm, Germany. Tel.: +49-731-505 2071, Fax: +49-731-505 4103
  • Volume
    2
  • fYear
    1999
  • fDate
    Oct. 1999
  • Firstpage
    415
  • Lastpage
    418
  • Abstract
    Novel coplanar microwave switches have been designed, fabricated, and tested. The switching element consists only of a thin vanadium dioxide (VO2) film patch. VO2 exhibits a first-order phase transition from a semi-conducting low temperature phase to a metallic high temperature phase resulting in an abrupt change of the electrical resistivity from 3·100 ¿cm to 3·10¿4 ¿cm at a phase transition temperature of Tt = 64°C. The switches have been designed for 24 GHz operation. In the "on"-state above Tt an insertion loss of 2.7 dB has been measured for a single pole single throw (SPST). At 60°C the switch is "off" resulting in an isolation of ¿25 dB. The dynamic range of the switch is higher than 22 dB. Additionally an SPDT (single pole double throw) has been realized, fabricated, and tested. The insertion loss is about 2 dB, the switching isolation is better than 18 dB.
  • Keywords
    Circuit testing; Conductivity; Crystals; Electric resistance; Hysteresis; Plasma properties; Plasma temperature; Semiconductivity; Semiconductor films; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1999. 29th European
  • Conference_Location
    Munich, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1999.338388
  • Filename
    4139528