DocumentCode
2149285
Title
Thermally Controlled Coplanar Microwave Switches
Author
Stotz, Michael ; Fritze, Stefan-Daniel ; Downar, Hartmut ; Wenger, Josef
Author_Institution
DaimlerChrysler Research Center, Radar Systems Group (FT2/HR), D-89081 Ulm, Germany. Tel.: +49-731-505 2071, Fax: +49-731-505 4103
Volume
2
fYear
1999
fDate
Oct. 1999
Firstpage
415
Lastpage
418
Abstract
Novel coplanar microwave switches have been designed, fabricated, and tested. The switching element consists only of a thin vanadium dioxide (VO2) film patch. VO2 exhibits a first-order phase transition from a semi-conducting low temperature phase to a metallic high temperature phase resulting in an abrupt change of the electrical resistivity from 3·100 ¿cm to 3·10¿4 ¿cm at a phase transition temperature of Tt = 64°C. The switches have been designed for 24 GHz operation. In the "on"-state above Tt an insertion loss of 2.7 dB has been measured for a single pole single throw (SPST). At 60°C the switch is "off" resulting in an isolation of ¿25 dB. The dynamic range of the switch is higher than 22 dB. Additionally an SPDT (single pole double throw) has been realized, fabricated, and tested. The insertion loss is about 2 dB, the switching isolation is better than 18 dB.
Keywords
Circuit testing; Conductivity; Crystals; Electric resistance; Hysteresis; Plasma properties; Plasma temperature; Semiconductivity; Semiconductor films; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1999. 29th European
Conference_Location
Munich, Germany
Type
conf
DOI
10.1109/EUMA.1999.338388
Filename
4139528
Link To Document