DocumentCode
2149325
Title
Bulk InP technologies: InP against GaAs
Author
Kohiro, K. ; Kainosho, K. ; Hirano, R. ; Uchida, M. ; Katsura, S. ; Kurita, H. ; Fukui, T. ; Oda, O.
Author_Institution
Electron. Mater. and Components Labs., Saitama, Japan
fYear
1994
fDate
27-31 Mar 1994
Firstpage
359
Lastpage
362
Abstract
Recently, the quality of InP bulk crystals has been greatly improved. In this paper, recent developments of InP crystal technologies are reviewed, including growth of large crystals, reduction of dislocation densities, preparation of undoped semi-insulating (SI) materials and polishing qualities. We also discuss the status of InP against GaAs from the viewpoints of substrate qualities and the production capability
Keywords
III-V semiconductors; crystal growth; dislocation density; indium compounds; polishing; semiconductor growth; substrates; InP; bulk InP technologies; bulk crystal quality; dislocation density reduction; large crystal growth; polishing; production capability; substrate quality; undoped semi-insulating material preparation; Crystalline materials; Gallium arsenide; Indium phosphide; Manufacturing; Optical materials; Photonic crystals; Production; Semiconductor materials; Substrates; Surface charging;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-1476-X
Type
conf
DOI
10.1109/ICIPRM.1994.328244
Filename
328244
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