DocumentCode
2149500
Title
Single Event Response of the Samsung 16G NAND Flash
Author
Oldham, T.R. ; Wilcox, Edward P. ; Friendlich, Mark R.
fYear
2013
fDate
8-12 July 2013
Firstpage
1
Lastpage
5
Abstract
This study was undertaken to identify and characterize the susceptibilities of the 16 Gbit NAND flash memories from Samsung to destructive and nondestructive single event effects (SEE).
Keywords
NAND circuits; flash memories; nondestructive testing; radiation hardening (electronics); space vehicle electronics; Samsung NAND flash memories; destructive single event effect; nondestructive single event effect; single event response; storage capacity 16 Gbit; Error correction; Flash memories; NASA; Radiation effects; Testing; Transient analysis; Xenon;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop (REDW), 2013 IEEE
Conference_Location
San Francisco, CA
ISSN
2154-0519
Print_ISBN
978-1-4799-1136-3
Type
conf
DOI
10.1109/REDW.2013.6658212
Filename
6658212
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