• DocumentCode
    2149548
  • Title

    Single Event Upset Characterization of the Spartan-6 Field Programmable Gate Array Using Proton Irradiation

  • Author

    Hiemstra, David M. ; Kirischian, Valeri

  • Author_Institution
    MDA, Brampton, ON, Canada
  • fYear
    2013
  • fDate
    8-12 July 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Spartan-6 FPGA are presented. Upset rates in the space radiation environment are estimated.
  • Keywords
    SRAM chips; field programmable gate arrays; SRAM; Spartan-6 FPGA; Spartan-6 field programmable gate array; functional blocks; logic configuration; proton irradiation; single event upset characterization; space radiation environment; Field programmable gate arrays; Logic gates; Performance evaluation; Protons; Radiation effects; Random access memory; Single event upsets;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2013 IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4799-1136-3
  • Type

    conf

  • DOI
    10.1109/REDW.2013.6658214
  • Filename
    6658214
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2149548