• DocumentCode
    2149577
  • Title

    Specific Characterization for Destructive Single Event Effects on GaAs Power P-HEMT MMIC

  • Author

    Marec, R. ; Bensoussan, A. ; Muraro, J.L. ; Portal, L. ; Calvel, P. ; Barillot, C. ; Perichaud, M.G. ; Marchand, Laurent ; Vignon, Gael

  • Author_Institution
    Thales Alenia Space, Toulouse, France
  • fYear
    2013
  • fDate
    8-12 July 2013
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Specific Single Event Effects characterization based on RF and worst case DC conditions are used to demonstrate that two European GaAs power P-HEMT MMIC processes are safe under heavy ions.
  • Keywords
    III-V semiconductors; MMIC; gallium arsenide; power HEMT; European GaAs power P-HEMT; GaAs; GaAs power P-HEMT; MMIC process; RF conditions; destructive single event effects; heavy ions; worst case DC conditions; Gallium arsenide; Ions; Logic gates; MESFETs; MMICs; Radio frequency; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2013 IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4799-1136-3
  • Type

    conf

  • DOI
    10.1109/REDW.2013.6658216
  • Filename
    6658216
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2149577