Reverse breakdown characteristics in InGa(Al)P/InGaP p-i-n junctions

Author

David, J.P.R. ; Hopkinson, M. ; Ghin, R. ; Pate, M.A.

Author_Institution

Dept. of Electron. & Electr. Eng., Sheffield Univ., UK

fYear

1994

fDate

27-31 Mar 1994

Firstpage

403

Lastpage

406

Abstract

The avalanche breakdown behaviour of InGa(Al)P has been investigated by growing a series of pin diode structures covering the material range from InGaP to InAlP. The results show that reverse leakage currents are very low in this material system in keeping with the large band-gap until the onset of avalanche breakdown. Comparing the breakdown voltage (Vbd) with that of GaAs, we find that significant increases are obtained, with InAlP having in excess of twice the Vbd of GaAs. Comparisons with AlGaAs structures of similar band-gap shows that the InGa(Al)P system still has a larger Vbd, suggesting that it may be better for power applications

Keywords

III-V semiconductors; aluminium compounds; energy gap; gallium compounds; impact ionisation; indium compounds; leakage currents; p-i-n diodes; InAlP-InGaP; InGa(Al)P/InGaP p-i-n junctions; InGaAlP-InGaP; InGaP-InGaP; avalanche breakdown; band-gap; breakdown voltage; pin diode; power applications; reverse breakdown; reverse leakage currents; Doping; Electric breakdown; Gallium arsenide; Heterojunctions; Ionization; Lattices; PIN photodiodes; Semiconductor device measurement; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328255

Filename

328255