DocumentCode
2149608
Title
Metal ions drift in ultra-low K dielectrics
Author
Ou, Y. ; Wang, P.-I. ; Lu, T.M.
Author_Institution
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
1320
Lastpage
1323
Abstract
Metal ions embedded in dielectric films may play an important role in the reliability of advanced interconnect systems. In this talk, we will discuss the generation and drift of different metal ions such as Cu, Ta, and Ti into the dielectric materials from gate electrodes under an external electric field at elevated temperatures. Some strategies to eliminate the generation of metal ions will also be presented.
Keywords
annealing; capacitors; copper; electrodes; integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; tantalum; titanium; Cu; Ta; Ti; annealing; bias temperature stress; dielectric films; dielectric material; electrode capacitors; flat-band voltage shifts; gate electrodes; metal ions drift; ultralow K dielectrics; Dielectric films; Dielectric materials; Electrodes; Inorganic materials; Leakage current; Metal-insulator structures; Stress; Temperature; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734798
Filename
4734798
Link To Document