60GHz high speed wireless link - technology and design challenges

Author

Wang, Dawn ; Cahoon, Ned

Author_Institution

IBM Corp., Westford, MA, USA

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1343

Lastpage

1347

Abstract

The recent success of millimeter wave integrated circuit designs in silicon has triggered a wave of interest and activity in a wide range of high speed wireless applications at 60 GHz. In this paper, we will review the latest developments in design and technology for 60 GHz multi-gigabit-per-second wireless communications. We will address the requirements and challenges for device performance, modeling and circuit design at millimeter wave frequencies, with a discussion of the advantages and disadvantages of SiGe BiCMOS and RFCMOS technology. Packaging, antenna design and integration will also be discussed.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; integrated circuit design; packaging; BiCMOS technology; RFCMOS technology; SiGe; antenna design; frequency 60 GHz; high speed wireless link; millimeter wave integrated circuit; multi-gigabit-per-second wireless communications; Circuit synthesis; Frequency; Integrated circuit synthesis; Integrated circuit technology; Millimeter wave circuits; Millimeter wave devices; Millimeter wave integrated circuits; Millimeter wave technology; Silicon; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734799

Filename

4734799