Low frequency noise sources in InAlAs/InGaAs MODFET´s

Author

Rojo-Romeo, P. ; Viktorovitch, P. ; Leclercq, J.L. ; Letartre, X. ; Tardy, J. ; Oustric, M. ; Gendry, M.

Author_Institution

Lab. d´´Electron., Ecole Centrale de Lyon, Ecully, France

fYear

1994

fDate

27-31 Mar 1994

Firstpage

423

Lastpage

426

Abstract

In this work, we present a study of various low-frequency noise (LFN) sources in InAlAs/InGaAs MODFET structures. The contributions of the main noise sources-drain and source contact resistance fluctuations, channel charge fluctuations and gate current noise-are separated by measuring the drain current power noise spectrum on uncompleted, gate free MODFET structures of different channel lengths. A variety of MBE grown structures was investigated: δ- and uniformly-doped MODFET´s: devices with lattice-matched and strained channel. Also experiments were performed on devices with different source and drain ohmic contacts

Keywords

III-V semiconductors; aluminium compounds; contact resistance; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; δ-doped structures; InAlAs-InGaAs; InAlAs/InGaAs MODFETs; MBE grown structures; channel charge fluctuations; contact resistance fluctuations; drain current power noise spectrum; gate current noise; lattice-matched channel; low frequency noise; ohmic contacts; strained channel; uniformly-doped structures; Charge measurement; Contact resistance; Current measurement; Electrical resistance measurement; Fluctuations; HEMTs; Indium compounds; Indium gallium arsenide; Low-frequency noise; MODFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328260

Filename

328260