• DocumentCode
    2150167
  • Title

    Radiation degradation in In0.53Ga0.47As solar cells

  • Author

    Messenger, S.R. ; Walters, R.J. ; Cotal, H.L. ; Summers, G.P.

  • Author_Institution
    SFA Inc., Landover, MD, USA
  • fYear
    1994
  • fDate
    27-31 Mar 1994
  • Firstpage
    504
  • Lastpage
    507
  • Abstract
    This paper presents the radiation results on p/n In0.53Ga00.47As bottom cells. The main conclusion is that In0.53Ga00.47As solar cells display the same radiation tolerance, regardless of the cell polarity. This result is, in general, not expected. Previous results involving damage coefficients for both Si, GaAs, and InP show that the polarity of the device does indeed matter. This paper therefore gives device fabricators the liberty of choosing either type of polarity depending on their needs
  • Keywords
    III-V semiconductors; electron beam effects; gallium arsenide; indium compounds; solar cells; In0.53Ga0.47As; cell polarity; damage coefficients; p/n In0.53Ga00.47As bottom cells; radiation degradation; solar cells; Degradation; Electrons; Extraterrestrial measurements; Indium gallium arsenide; Indium phosphide; Lighting; Photovoltaic cells; Space heating; Space technology; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-1476-X
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1994.328279
  • Filename
    328279
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2150167