A 0.18μm CMOS high linearity flat conversion gain down-conversion mixer for UWB receiver

Author

Fu, Delong ; Huang, Lu ; Du, Hongliang ; Yuan, Haiquan

Author_Institution

Dept. of Electron. Sci. & Technol., Univ. of Sci. & Technol. of China, Hefei, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1492

Lastpage

1495

Abstract

A high linearity flat conversion gain down-conversion mixer for 3.1˜4.9 GHz Ultra-wide Band (UWB) receiver is presented in this paper. The mixer is designed based on Gilbert cell. It adopts source degeneration resistors and current injection method to improve the linearity. Shunt-peaking technique and tuning inductors are used to flat conversion gain. Designed and fabricated with SMIC 0.18 μm CMOS technology, the mixer achieves high linearity with third-order intercept point (IIP3) of better than 12.4 dBm, flat conversion gain of 4.9 ± 0.2 dB, while consuming only 5.1 mA from a 1.8 V power supply. The core area is 920 Ã— 840 μm².

Keywords

CMOS integrated circuits; MMIC mixers; inductors; microwave receivers; resistors; ultra wideband technology; CMOS technology; Gilbert cell; current 5.1 mA; current injection; frequency 3.1 GHz to 4.9 GHz; gain 4.9 dB; high linearity flat conversion gain down-conversion mixer; shunt-peaking technique; source degeneration resistors; third-order intercept point; tuning inductors; ultra-wide band receiver; voltage 1.8 V; CMOS technology; Energy consumption; Linearity; Mixers; Noise measurement; Radio frequency; Resistors; Transconductance; Ultra wideband technology; Wireless communication; Down Conversion; Flat Conversion Gain; High Linearity; Mixer; UWB;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734829

Filename

4734829