Properties of compressive and tensile strain compensated InGaAsP/InP quantum well laser structures

Author

Miller, Barry I.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

fYear

1994

fDate

27-31 Mar 1994

Firstpage

539

Lastpage

542

Abstract

We describe the idea behind strain compensation and how it is important for high quality lasers and amplifiers. Examples of compensated and uncompensated structures are compared in X-ray rocking curves, photoluminescence, and lasing properties. The unique properties of devices which use strain compensated compressive and/or tensile wells are described, such as wide band tunable lasers, large bandwidth amplifiers, and polarization independent amplifiers

Keywords

III-V semiconductors; X-ray diffraction examination of materials; gallium arsenide; indium compounds; laser tuning; photoluminescence; semiconductor lasers; InGaAsP-InP; InGaAsP/InP quantum well laser; X-ray rocking curves; compressive strain; large bandwidth amplifiers; photoluminescence; polarization independent amplifiers; strain compensation; tensile strain; wide band tunable lasers; Capacitive sensors; Indium phosphide; Laser feedback; Photoluminescence; Quantum well devices; Quantum well lasers; Solids; Superlattices; Tensile strain; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328288

Filename

328288