DocumentCode
2150433
Title
A tester for the contact resistivity of self-aligned silicides
Author
Lynch, W.T. ; Ng, K.K.
Author_Institution
AT&T Bell Lab., Murray Hill, NJ, USA
fYear
1988
fDate
11-14 Dec. 1988
Firstpage
352
Lastpage
355
Abstract
A novel tester is presented which utilizes MOSFET inversion channels to connect silicided source/drain electrically to satisfy the requirements of a Kelvin tester. This tester, basically two MOSFETs back to back, can be fabricated along with real devices and requires no additional processing steps. Two version of the Kelvin tester have been examined, the cross-bridge Kelvin resistor and the contact end resistor. The principles of these devices are explained, and some measurements are reported.<>
Keywords
contact resistance; electric resistance measurement; metallisation; test equipment; MOSFET inversion channels; contact end resistor; contact resistivity; cross-bridge Kelvin resistor; self-aligned silicides; source/drain contacts; tester; Automatic testing; Circuit testing; Conductivity; Contacts; Kelvin; MOSFETs; Metallization; Monitoring; Resistors; Silicides;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1988.32829
Filename
32829
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