The RF front-end single-chip SOI solution

In order to verify RF front-end single-chip solution, we have demonstrated several design cases for both Power Amplifier (PA) cells using SiGe HBTs and RF Switches (RFS) using CMOS technology on SOI. The PA-cell packaged has achieved 28 dBm linear output power with 36.2% PAE and more than 9.1dB gain at 836 MHz and 3.6 V. The PA-cell passes VSWR=10:1 ruggedness test at 4.2 V. With more on-wafer loadpulled results, we can qualify the PA-cell for CDMA/WCDMA applications. The RFS has on-wafer measured 0.5~1.5 dB insertion loss until 2.4 GHz and the packaged SP6T test [4] has reached >=34 dBc isolation and 1.4 dB insertion loss at 1.8 GHz with 41 dBm P_0.1dB at 900 MHz. The design test has shown a promising perspective that the RF front-end single-chip solution will be capable of implementations based on Jazz¿s thick-film SOI SiGe BiCMOS technology platform.