Interconnected lift-off VCSELs for microcavity device arrays

Author

Raley, J.A. ; Lott, J.A. ; Nelson, T.R., Jr. ; Stintz, A. ; Malloy, K.J.

Author_Institution

Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA

fYear

2002

fDate

2002

Abstract

A schematic diagram of a lift-off VCSEL structure designed to emit at 980 nm is shown. All devices herein are grown by molecular beam epitaxy on [001]-oriented GaAs substrates. The VCSELs have a standard triple InGaAs/AlGaAs quantum well active region within a 1 λ-thick microcavity. The distributed Bragg reflectors (DBRs) are composed of GaAs and Al_0.9Ga_0.1As quarter-wave layers.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser transitions; microcavity lasers; molecular beam epitaxial growth; quantum well lasers; surface emitting lasers; 980 nm; Al_0.9Ga_0.1As; Al_0.9Ga_0.1As quarter-wave layers; InGaAs-AlGaAs; [001]-oriented GaAs substrates; distributed Bragg reflectors; interconnected lift-off VCSELs; lift-off VCSEL structure design; microcavity device arrays; molecular beam epitaxy; standard triple InGaAs/AlGaAs quantum well active region; Apertures; Bridge circuits; Distributed Bragg reflectors; Dry etching; Gallium arsenide; Microcavities; Optical device fabrication; Semiconductor laser arrays; Substrates; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical Transmission/VCSEL and

ISSN

1099-4742

Print_ISBN

0-7803-7378-2

Type

conf

DOI

10.1109/LEOSST.2002.1027599

Filename

1027599