200 kHz linewidth of 780 nm high-power distributed feedback diode laser

Author

Nguyen, T.-P. ; Klehr, A. ; Brox, O. ; Erbert, G. ; Trankle, G.

Author_Institution

Ferdinand-Braun-Inst. fur Hoechstfrequenztechnik, Berlin

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

Narrow-linewidth semiconductor lasers emitting in the wavelength range between 760 and 790 nm are attractive for applications such as state selection in rubidium atomic clocks, Doppler laser cooling, nonlinear frequency conversion, Raman and absorption spectroscopy. These applications require a stable lasing frequency together with a high output power. Distributed feedback (DFB) diode lasers with high power and narrow linewidth can satisfy these requirements.

Keywords

Raman spectroscopy; atomic clocks; distributed feedback lasers; laser cooling; optical frequency conversion; semiconductor lasers; Doppler laser cooling; Raman spectroscopy; absorption spectroscopy; frequency 200 kHz; high power distributed feedback diode laser; narrow linewidth semiconductor lasers; nonlinear frequency conversion; rubidium atomic clocks; state selection; wavelength 760 nm to 790 nm; Absorption; Atom lasers; Atomic clocks; Cooling; Diode lasers; Distributed feedback devices; Frequency conversion; Laser feedback; Semiconductor lasers; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4385991

Filename

4385991