A reliable ECR passivation technique on the 0.1 μm InAlAs/InGaAs HEMT device

Author

Hwang, K.C. ; Reisinger, A.R. ; Duh, K.H.G. ; Kao, M.Y. ; Chao, P.C. ; Ho, P. ; Swanson, R.W.

Author_Institution

Martin Marietta Electron. Lab., Syracuse, NY, USA

fYear

1994

fDate

27-31 Mar 1994

Firstpage

624

Lastpage

627

Abstract

We have developed a reliable nitride passivation technique on the 0.1×50 μm InAlAs/InGaAs/InP high electron mobility transistor (HEMT) using electron cyclotron resonance (ECR) microwave plasma chemical vapor deposition (CVD). The nitride film was characterized by Fourier transform infrared spectroscopy (FTIR). The stress in the film was measured from wafer curvature. The ECR SiN passivation has almost no effect on the noise and gain performance of 0.1 μm InP-HEMTs at 60 GHz. DC accelerated life tests were performed at base temperatures of 225°C and 245°C. The Median-Time-To-Failure (MTF) based upon a failure criterion of g_m=-20% leads to an Arrhenius plot with an activation energy of 1.6 eV and a projected life of 10⁶ hours at 150°C base plate temperature, which is the best median life time ever reported for passivated InP-HEMTs

Keywords

aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; life testing; passivation; plasma CVD; semiconductor device testing; solid-state microwave devices; 0.1 micron; 225 degC; 245 degC; 60 GHz; Arrhenius plot; DC accelerated life tests; ECR passivation technique; Fourier transform infrared spectroscopy; InAlAs-InGaAs; InAlAs/InGaAs HEMT device; activation energy; base temperatures; electron cyclotron resonance; gain performance; median-time-to-failure; microwave plasma chemical vapor deposition; nitride passivation; noise performance; projected life; wafer curvature; Cyclotrons; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Passivation; Plasma measurements; Plasma temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328310

Filename

328310