Impact of design on high frequency performances of advanced MIM capacitors using SiN dielectric layers

Author

Piquet, J. ; Bermond, Cedric ; Thomas, Martyn ; Farcy, A. ; Lacrevaz, Thierry ; Blampey, B. ; Torres, Juana ; Flechet, Bernard ; Angenieux, G.

Author_Institution

LAHC, Univ. de Savoie, France

fYear

2005

fDate

12-17 June 2005

Abstract

High frequency characterizations of ultra thin 32 nm PECVD Si₃N₄ dielectric on advanced metal-insulator-metal (MIM) capacitors are presented. We focused on the impact of design on the performances of MIM capacitors realized on Si substrates. The frequency dependent behavior of capacitance is extracted over a wide frequency bandwidth. An equivalent circuit model of capacitors including four parameters is developed to explain this behavior. Results are compared to values obtained by 3D electro-magnetic modeling.

Keywords

MIM devices; capacitors; dielectric materials; equivalent circuits; plasma CVD; silicon compounds; 32 nm; 3D electro-magnetic modeling; MIM capacitors; PECVD; Si₃N₄; SiN; SiN dielectric layers; equivalent circuit model; frequency dependent behavior; high frequency characterization; high frequency performance; metal-insulator-metal capacitors; ultra thin dielectric; Capacitance; Copper; Dielectric substrates; Electrodes; Fingers; Integrated circuit interconnections; MIM capacitors; Radio frequency; Silicon compounds; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1516583

Filename

1516583