• DocumentCode
    2153550
  • Title

    High Power GaAs MMIC Chipsets for 18 to 32 GHz Frequency Band Applications

  • Author

    Betti-Berutto, A. ; Poledrelli, C. ; Benelbar, R. ; Chen, S.T. ; Khandavalli, C. ; Satoh, T. ; Hasegawa, Y. ; Kuroda, S. ; Fukaya, J.

  • Author_Institution
    Fujitsu Compound Semiconductor Inc., San Jose, CA, USA. aberutto@fcsi.fujitsu.com
  • fYear
    2000
  • fDate
    Oct. 2000
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Recent commercial wireless applications such as Point to Point radio links, LMDS (Local Multipoint Distribution Service), LMCS (Local multi-point Communications Service) and Commercial K-Band Satellite based services have spurred significant activity in development of mmWave power amplifiers. These applications lie in the frequency range of 18 to 42GHz with possible future extensions to 60GHz. These systems employ digital modulation schemes for which highly linear mmWave power amplifiers are essential. This paper presents an overview of some chipsets consisting of High Power amplifiers covering the frequency range of 18 to 32GHz. Preferred solutions to a low cost subsystem vary from one subsystem manufacturer to another as it involves assembly and test capabilities in addition to component costs. The overall direction appears to be toward multi-chip module assemblies. Here, both chip and packaged level component options are considered.
  • Keywords
    Artificial satellites; Assembly; Costs; Frequency; Gallium arsenide; High power amplifiers; K-band; MMICs; Radio link; Satellite broadcasting;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2000. 30th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.2000.338696
  • Filename
    4139709