DocumentCode
2153550
Title
High Power GaAs MMIC Chipsets for 18 to 32 GHz Frequency Band Applications
Author
Betti-Berutto, A. ; Poledrelli, C. ; Benelbar, R. ; Chen, S.T. ; Khandavalli, C. ; Satoh, T. ; Hasegawa, Y. ; Kuroda, S. ; Fukaya, J.
Author_Institution
Fujitsu Compound Semiconductor Inc., San Jose, CA, USA. aberutto@fcsi.fujitsu.com
fYear
2000
fDate
Oct. 2000
Firstpage
1
Lastpage
3
Abstract
Recent commercial wireless applications such as Point to Point radio links, LMDS (Local Multipoint Distribution Service), LMCS (Local multi-point Communications Service) and Commercial K-Band Satellite based services have spurred significant activity in development of mmWave power amplifiers. These applications lie in the frequency range of 18 to 42GHz with possible future extensions to 60GHz. These systems employ digital modulation schemes for which highly linear mmWave power amplifiers are essential. This paper presents an overview of some chipsets consisting of High Power amplifiers covering the frequency range of 18 to 32GHz. Preferred solutions to a low cost subsystem vary from one subsystem manufacturer to another as it involves assembly and test capabilities in addition to component costs. The overall direction appears to be toward multi-chip module assemblies. Here, both chip and packaged level component options are considered.
Keywords
Artificial satellites; Assembly; Costs; Frequency; Gallium arsenide; High power amplifiers; K-band; MMICs; Radio link; Satellite broadcasting;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. 30th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.2000.338696
Filename
4139709
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