• DocumentCode
    2153833
  • Title

    Enhanced linearity and efficiency of HBT power amplifiers for 5-GHz wireless-LANs

  • Author

    Oka, Tohru ; Hasegawa, Masatomo ; Fujita, Koichiro ; Yamashita, Masaharu ; Hirata, Michitoshi ; Kawamura, Hiroshi ; Sakuno, Keiichi

  • Author_Institution
    Devices Technol. Res. Labs., Sharp Corp., Nara, Japan
  • fYear
    2005
  • fDate
    12-17 June 2005
  • Abstract
    This paper describes two advanced techniques to enhance linearity and efficiency in HBT power amplifiers (PA) for 5-GHz wireless-LANs (W-LANs). The diode-based linearizing circuit successfully compensates the gain expansion of PAs operating at a low quiescent current. The output matching circuit consisting of on-chip MIM capacitors and bond wires effectively reduces the loss of the circuit as well as allowing the miniaturization of the PA module. The PA MMIC fabricated incorporating these techniques achieved an improvement in linear output power and PAE of 2.4 dBm and 4.8%, respectively, compared to our previous PA with the same device dimensions, and exhibited an output power of 22.1 dBm and a PAE of 27.3% at an EVM of 5%, measured with 54Mbps 64-QAM-OFDM signals at 5.25 GHz.
  • Keywords
    MMIC amplifiers; heterojunction bipolar transistors; millimetre wave power amplifiers; wireless LAN; 27.3 percent; 4.8 percent; 5 GHz; 5 percent; 5.25 GHz; 54 Mbit/s; HBT power amplifiers; PA MMIC; PA module; diode-based linearizing circuit; enhanced linearity; gain expansion; low quiescent current; on-chip MIM capacitors; output matching circuit; wireless-LAN; Bonding; Circuits; Diodes; Heterojunction bipolar transistors; Impedance matching; Linearity; MIM capacitors; Power amplifiers; Power generation; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2005 IEEE MTT-S International
  • ISSN
    01490-645X
  • Print_ISBN
    0-7803-8845-3
  • Type

    conf

  • DOI
    10.1109/MWSYM.2005.1516689
  • Filename
    1516689