TFSOI-can it meet the challenge of single chip portable wireless systems?

Author

Huang, W.M. ; Monk, D.J. ; Diaz, D.C. ; Welch, P.J. ; Ford, J.M.

Author_Institution

Wireless Subscriber Syst. Group, Motorola Inc., Mesa, AZ, USA

fYear

1997

fDate

6-9 Oct 1997

Firstpage

1

Lastpage

3

Abstract

Tremendous progress in understanding and improving SOI material and devices has been made in recent years. The reduced junction capacitance and the minimal body-effect of SOI provides an inherent advantage for low-voltage low-power applications. Recent growth in the portable wireless communication market and the push for low cost solutions have driven the semiconductor industry into a race for the ultimate solution: a single chip radio capable of handling both the RF and baseband functions. In this paper, the applications of Thin-Film-Silicon-On-Insulator (TFSOI) to the different circuit elements of wireless communication systems are reviewed. The use of CMOS SOI devices as well as future development essential to realize the single chip radio are discussed

Keywords

CMOS integrated circuits; integrated circuit technology; land mobile radio; mobile radio; silicon-on-insulator; CMOS SOI devices; SOI material; Si; junction capacitance reduction; low-power applications; low-voltage applications; single chip portable wireless systems; single chip radio; thin-film SOI; Baseband; CMOS technology; Capacitance; Central Processing Unit; Circuits; Energy management; Power system management; Radio frequency; Threshold voltage; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1997. Proceedings., 1997 IEEE International

Conference_Location

Fish Camp, CA

ISSN

1078-621X

Print_ISBN

0-7803-3938-X

Type

conf

DOI

10.1109/SOI.1997.634904

Filename

634904