Properties of Ga-Zn based mixed oxides for gas sensing applications

Author

Trinchi, A. ; Galatsis, K. ; Li, Y.X. ; Wlodarski, W. ; Russo, S.P. ; du Plesis, J. ; Rout, B.

Author_Institution

Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, Vic., Australia

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

225

Lastpage

228

Abstract

Gallium-Zinc mixed metal oxides have been fabricated by the sol-gel process and tested towards oxygen gas. These films were deposited on alumina transducers with interdigital electrodes for gas sensing measurements and on single crystal silicon substrates for microcharacterization. X-ray Photoelectron Spectroscopy (XPS) and Rutherford Backscattering Spectrometry (RBS) showed that the actual concentrations in Ga-Zn oxide thin films differ from the nominal values in the prepared solutions as a function of annealing temperature. Furthermore, the concentration of Zn decreases with a rise of sample annealing temperature. It was found that by increasing the amount of Zn in the sensor film, the operating temperature decreased as well as the base resistance.

Keywords

Rutherford backscattering; X-ray photoelectron spectra; alumina; annealing; chemical variables measurement; gallium compounds; gas sensors; oxygen; semiconductor thin films; sol-gel processing; transducers; wide band gap semiconductors; zinc compounds; Ga-Zn based mixed oxides; Ga-Zn oxide thin films; Ga₂O₃-ZnO-Si; Rutherford backscattering spectrometry; Si; X-ray photoelectron spectroscopy; XPS; alumina transducers; annealing temperature; base resistance; gallium-zinc mixed metal oxides; gas sensing applications; gas sensing measurements; interdigital electrodes; microcharacterization; oxygen gas; sensor film; single crystal silicon substrates; sol-gel process; Annealing; Electrodes; Semiconductor films; Silicon; Spectroscopy; Substrates; Temperature sensors; Testing; Transducers; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237233

Filename

1237233