Simulation study of the DC and AC characteristics of an improved InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with an InGaP wide bandgap collector

Author

Cheng, Shiou-Ying

Author_Institution

Dept. of Electr. Eng., Oriental Inst. of Technol., Taipei, Taiwan

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

451

Lastpage

454

Abstract

In this work, an improved InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with an InGaP wide bandgap collector is investigated. In the emitter-base region, the thin narrow bandgap n-type GaAs layer is sandwiched between a wide bandgap N-type InGaP confinement layer and a narrow bandgap p-type GaAs base layer. In the collector-base structure, an undoped 30 A˚-thick GaAs spacer and a heavily doped 30 A˚-thick GaAs layer are inserted between the base and the collector. Due to the absence of potential spike both at base-emitter and base-collector junctions, the proposed device shows the lower offset and saturation voltages.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; HEBT; InGaP wide bandgap collector; InGaP-GaAs; InGaP/GaAs heterostructure-emitter bipolar transistor; collector-base structure; emitter-base region; Bipolar transistors; Charge carrier processes; Cities and towns; Gallium arsenide; Heterojunction bipolar transistors; Photonic band gap; Poisson equations; Radiative recombination; Spontaneous emission; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237287

Filename

1237287