Parallel gain enhancement technique for switched-capacitor circuits

This paper presents a unified classification model for gain enhancement techniques used in the design of high performance amplifiers. A parallel gain enhancement technique is proposed for switched capacitor circuits which combine the best features of the existing gain enhancement techniques found in continuous-time and discrete-time amplifiers. This technique utilizes two dependent closed loop amplifiers to enhance the open loop DC gain of the main amplifier. This replicated parallel gain enhancement (RPGE) technique enables a very high DC gain amplifier with an improved harmonic distortion performance. A proof of concept pipeline ADC in a 0.18 um CMOS process using RPGE technique achieves 75 dB SNDR, 91 dB SFDR, -87 dB THD at 20 MS/s. The measured 13 bit DNL and INL is +0.75/-0.36 and +0.88/-0.92 LSB respectively. The ADC operates from a supply voltage of 1.3 V, consumes 5.9 mW, occupies 3.06 mm² and achieves a figure of merit of 65 fJ/CS.