i-AlGaAs/n-GaAs doped-channel heterostructure insulated gate FET (DC-HIGFET) with n/sup +/-GaAs selectively grown by MOCVD

Author

Takatani, S. ; Shigeta, J.

Author_Institution

Hitachi Ltd., Tokyo, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

692

Lastpage

695

Abstract

i-AlGaAs/n-GaAs heterostructure FETs with n/sup +/-GaAs source and drain regions selectively grown by MOCVD (metal-organic chemical vapor deposition) were developed. Diode I-V characteristics and TEM (transmission electron microscope) observations showed that the epitaxial structures are preserved in the present process. A small source resistance (0.35 Omega -mm) and a minimal threshold voltage shift at a short gate-length 0.3- mu m gate showed a high K value of 650 mS/mm. The high current drivability and the small threshold voltage shift at short gate-lengths suggest the potential of the DC-HIGFETs for LSI applications.<>

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; field effect integrated circuits; gallium arsenide; insulated gate field effect transistors; integrated circuit technology; large scale integration; semiconductor junctions; semiconductor technology; 0.3 micron; 0.35 ohmmm; 650 mS/mm; AlGaAs-GaAs; DC-HIGFET; LSI applications; MOCVD; TEM; diode I/V characteristics; doped-channel heterostructure insulated gate FET; heterostructure FETs; high current drivability; metal-organic chemical vapor deposition; semiconductors; short gate-length; source resistance; threshold voltage shift; Chemical vapor deposition; Diodes; FETs; HEMTs; High K dielectric materials; Insulation; MOCVD; MODFETs; Threshold voltage; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32907

Filename

32907