Projecting the minimum acceptable oxide thickness for time-dependent dielectric breakdown

Author

Moazzami, R. ; Lee, J. ; Chen, I.-C. ; Hu, C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

710

Lastpage

713

Abstract

A technique is presented for determining the thinnest oxide which satisfies a given time-dependent dielectric breakdown reliability specification. The intrinsic limit for a 10-yr lifetime at 125 degrees C is estimated to be 80 A for 5.5-V operation and 50 A for 3.6-V operation. For the particular technology studies here, 150-AA oxide meets typical reliability specifications for 5.5-V operation, and 80-AA oxide is acceptable for 3.6-V operation (both at 125 degrees C).<>

Keywords

dielectric thin films; electric breakdown of solids; insulated gate field effect transistors; insulating thin films; metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; reliability; semiconductor technology; silicon compounds; 10 y; 125 C; 3.6 V; 5.5 V; 50 to 150 A; SiO/sub 2/ ultrathin films; TDDB; gate dielectrics; gate oxides; intrinsic limit; lifetime; minimum acceptable oxide thickness; reliability specification; thinnest oxide; time-dependent dielectric breakdown; Dielectric breakdown; Instruments; Life estimation; Lifetime estimation; Lifting equipment; MOS devices; Predictive models; Temperature; Virtual manufacturing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32911

Filename

32911