Low dose SIMOX and impact of ITOX process on quality of SOI film

Author

Maszara, W.P. ; Bennett, J. ; Boden, T. ; Dockerty, R. ; Gondran, C.F.H. ; Jackett-Murphy, S. ; Vasudev, P.K. ; Anc, M.J. ; Hovel, H.

Author_Institution

SEMATECH, Austin, TX, USA

fYear

1997

fDate

6-9 Oct 1997

Firstpage

18

Lastpage

19

Abstract

Summary form only given. Internal thermal oxidation (ITOX) has been shown to improve the quality of buried oxide (BOX) in low dose (4E17 cm^-2) SOI SIMOX material. SOI film quality of ITOX SIMOX was determined to be as good as bulk in terms of the integrity of gate oxide grown on it. We have investigated low dose SIMOX material and the impact of its high temperature annealing as well as the subsequent ITOX process on structure and electrical properties of its SOI film. Several new findings about the SOI film quality and its relationship to process parameters are reported

Keywords

SIMOX; annealing; buried layers; ion implantation; oxidation; 1350 C; 200 mm; ITOX process; SOI SIMOX material; SOI film quality; Si; buried oxide; electrical properties; gate oxide integrity; high temperature annealing; internal thermal oxidation; low dose SIMOX; process parameters; Annealing; Argon; Atmospheric waves; Atomic force microscopy; Etching; MOS capacitors; Oxidation; Photoconductivity; Rough surfaces; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1997. Proceedings., 1997 IEEE International

Conference_Location

Fish Camp, CA

ISSN

1078-621X

Print_ISBN

0-7803-3938-X

Type

conf

DOI

10.1109/SOI.1997.634911

Filename

634911