Electrochemically etched pore array in silicon with large spacing and high-aspect-ratio

Author

Qi, Rui ; Yue, Ruifeng

Author_Institution

Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

2424

Lastpage

2427

Abstract

Based on electrochemical etching with illumination from backside, we present a novel fabrication technique which can produce pore array in silicon with large pore spacing and high-aspect-ratio, and the regularly distributed pore array with both spacing and depth of up to several hundred micrometers can be achieved. The difficulties have been investigated according to the mechanism of macroporous silicon formation, and the primary design guidelines of the mask and the processing environment are given.

Keywords

elemental semiconductors; etching; integrated circuit design; masks; porous semiconductors; silicon; Si; electrochemical etching; electrochemically etched pore array; fabrication technique; high-aspect-ratio; illumination; large pore spacing; macroporous silicon formation; mask; Anisotropic magnetoresistance; Costs; Fabrication; Information science; Laboratories; Lighting; Semiconductor device modeling; Silicon; Thyristors; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4735060

Filename

4735060