• DocumentCode
    2156837
  • Title

    An improved packaging technology for RF power transistors

  • Author

    McCarthy, Simon ; Smith, Phil ; Walker, John ; Padfield, Nick

  • Author_Institution
    SEMELAB plc, Lutterworth, UK
  • fYear
    2005
  • fDate
    12-17 June 2005
  • Abstract
    This paper presents an improved packaging technology for RF power transistors that is beryllia-free and which halves the thermal resistance compared with the conventional approach. This new technology also reduces the source inductance and increases the gain.
  • Keywords
    microwave power transistors; semiconductor device packaging; thermal resistance; RF power transistors; beryllia-free packaging; packaging technology; source inductance; thermal resistance; Conducting materials; Flanges; Inductance; Packaging; Power MOSFET; Power transistors; Radio frequency; Silicon; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2005 IEEE MTT-S International
  • ISSN
    01490-645X
  • Print_ISBN
    0-7803-8845-3
  • Type

    conf

  • DOI
    10.1109/MWSYM.2005.1516841
  • Filename
    1516841
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2156837