An ultra-low power InAs/AlSb HEMT W-band low-noise amplifier

Author

Hacker, Jonathan B. ; Bergman, Joshua ; Nagy, Gabor ; Sullivan, Gerard ; Kadow, J.C. ; Lin, H.-K. ; Gossard, A.C. ; Rodwell, Mark ; Brar, B.

fYear

2005

fDate

12-17 June 2005

Abstract

An antimonide-based compound semiconductor (ABCS) microstrip MMIC, a W-band low-noise amplifier using 0.2-μm gate length InAs/AlSb metamorphic HEMTs, has been fabricated and characterized on a 50 μm GaAs substrate. The compact 1.2 mm² five-stage W-band LNA demonstrated a 3.9 dB noise-figure at 94 GHz with an associated gain of 20.5 dB. The measured dc power dissipation of the ABCS LNA was an ultra-low 1.2mW per stage, or 6.0 mW total which is less than one-tenth the dc power dissipation of a typical equivalent InGaAs/AlGaAs/GaAs HEMT LNA. Operation with degraded gain and noise figure at 3.5 mW total dc power dissipation is also verified. These results demonstrate the outstanding potential of ABCS HEMT technology for mobile and space-based millimeter-wave applications.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium arsenide; indium compounds; low noise amplifiers; low-power electronics; millimetre wave amplifiers; 0.2 micron; 1.2 mW; 20.5 dB; 3.5 mW; 3.9 dB; 50 micron; 6 mW; 94 GHz; InAs-AlSb-GaAs; InGaAs-AlGaAs-GaAs; W-band low-noise amplifier; antimonide-based compound semiconductor; metamorphic HEMT; microstrip MMIC; ultra-low power HEMT amplifier; Gain; Gallium arsenide; HEMTs; Low-noise amplifiers; MMICs; Microstrip; Power dissipation; Semiconductor device noise; Substrates; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1516844

Filename

1516844