Scalable behavior modeling for 3D field-programmable ESD protection structures

Author

Wang, Lingfeng ; Wang, Xiongfei ; Shi, Z.T. ; Ma, Ronghua ; Zhang, Chenghui ; Dong, Zhaoyang ; Lu, Feng ; Zhao, Hang ; Wang, Aiping

Author_Institution

Dept. of Electr. Eng., Univ. of California, Riverside, Riverside, CA, USA

fYear

2013

fDate

22-25 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

This paper reports new accurate and scalable behavioral modeling for novel 3D field-programmable ESD protection circuits using Verilog-A, which enables post-Si on-chip and insystem ESD protection design simulation and verification. New field-programmable ESD protection devices were fabricated in CMOS-compatible processes utilizing SONOS and nano crystal dots structures. The ESD behavior models were developed from ESD testing results and verified in SPICE circuit simulation.

Keywords

CMOS memory circuits; circuit simulation; electrostatic discharge; integrated circuit design; integrated circuit modelling; integrated circuit reliability; random-access storage; semiconductor device models; semiconductor device reliability; 3D field-programmable ESD protection structures; CMOS-compatible processes; ESD testing; SONOS structures; SPICE circuit simulation; Verilog-A; electrostatic discharge; in-system ESD protection design simulation; nanocrystal dots structures; post-Si on-chip; scalable behavior modeling; silicon-oxide-nitride-oxide-silicon structures; Circuit simulation; Electrostatic discharges; Integrated circuit modeling; SONOS devices; SPICE; Solid modeling; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference (CICC), 2013 IEEE

Conference_Location

San Jose, CA

Type

conf

DOI

10.1109/CICC.2013.6658492

Filename

6658492