Field enhancement due to surface structuring during aluminum induced crystallization of amorphous silicon

Author

Burford, Nathan ; El-Shenawee, Magda ; Shumate, Seth ; Hutchings, Douglas ; Naseem, Hameed

Author_Institution

Electr. Eng. Dept., Univ. of Arkansas, Fayetteville, AR, USA

fYear

2012

fDate

8-14 July 2012

Firstpage

1

Lastpage

2

Abstract

Aluminum induced crystallization (AIC) of amorphous silicon (a-Si) may potentially be causing the formation of plasmonic nanostructures on the silicon surface. Field enhancement within the silicon layer will be quantified in order to develop an understanding of the observed enhancement. Computer simulations using HFSS are presented here. The electric fields absorbed inside the silicon are obtained as a function of the incident wavelength due to irregular nanostructures of aluminum patches to simulate the induced aluminum-silicon patches.

Keywords

aluminium; amorphous semiconductors; crystallisation; elemental semiconductors; nanostructured materials; plasmonics; silicon; surface structure; Al; Si; aluminum induced crystallization; amorphous silicon; computer simulations; field enhancement; irregular nanostructures; plasmonic nanostructures; surface structuring; Aluminum; Amorphous silicon; Crystallization; Nanostructures; Optical surface waves; Plasmons;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium (APSURSI), 2012 IEEE

Conference_Location

Chicago, IL

ISSN

1522-3965

Print_ISBN

978-1-4673-0461-0

Type

conf

DOI

10.1109/APS.2012.6349213

Filename

6349213