DocumentCode
2158720
Title
Electrically tunable and temperature compensated FBAR
Author
Pang, Wei ; Yu, Hongyu ; Zhang, Hao ; Kim, Eun Sok
fYear
2005
fDate
12-17 June 2005
Abstract
This paper describes the design, fabrication and of an electrically tunable, temperature compensated film bulk acoustic resonator (FBAR) that is formed by integrating FBAR with an electrostatic MEMS actuator. About 0.9% tuning (Δf ≅26 MHz) of the series resonant frequency at 2.8 GHz has been obtained with less than 10 V. This is the highest frequency tuning reported for FBAR operating above 1GHz without any extra power consumption. Moreover, the air-gap capacitor (that forms the MEMS actuator) passively reduces the FBAR´s temperature coefficient of frequency (TCF) by about 40 ppm/°C.
Keywords
acoustic resonators; bulk acoustic wave devices; capacitors; compensation; electrostatic actuators; tuning; 2.8 GHz; air-gap capacitor; electrical tuning; electrostatic MEMS actuator; film bulk acoustic resonators; series resonant frequency; surface micromachined tunable capacitor; temperature coefficient of frequency; temperature compensation; Air gaps; Capacitors; Electrostatic actuators; Energy consumption; Fabrication; Film bulk acoustic resonators; Micromechanical devices; Resonant frequency; Temperature; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN
01490-645X
Print_ISBN
0-7803-8845-3
Type
conf
DOI
10.1109/MWSYM.2005.1516911
Filename
1516911
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