DocumentCode
2159899
Title
A 0.9V Low Voltage 0.13W Power Amplifier with 37% PAE at 1 GHz in Standard CMOS
Author
Liebermann, Thomas ; Tiebout, Marc ; Simbürger, Werner ; Wohlmuth, Hans-Dieter ; Heinz, Alexander
Author_Institution
Infineon Technologies AG, Dept. Wireless Systems, Tel: +49 89 234 45856, Fax: +49 89 234 28843, P.O. Box 800949, D-81609 Munich, Germany. e-mail: thomas.liebermann@infineon.com
fYear
2000
fDate
Oct. 2000
Firstpage
1
Lastpage
4
Abstract
This work presents the design of a monolithically integrated CMOS RF power amplifier for 0.9 - 1.1GHz operating from one single power supply voltage of 0.9V to 1.65V. The amplifier was processed in a 2.5V, 0.25¿m, 4 metal layer standard CMOS process of Infineon with fT = 40GHz. At 0.9V supply voltage an output power of 0.13W (21.2dBm) is achieved with a power added efficiency (PAE) of 37% at 1GHz. At 1.65V supply voltage, the output power is 0.41W (26.2dBm) with a PAE of 31.2% at 1GHz.
Keywords
CMOS process; CMOS technology; Circuits; Inductors; Low voltage; Power amplifiers; Power generation; Power supplies; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. 30th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.2000.338631
Filename
4139957
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