DocumentCode
2162490
Title
Vdd impact on propagation pulse width variation in PD SOI circuits
Author
Min, B.W. ; Workman, G. ; Duckhyun Chang ; Zia, O. ; Yanyao Yu ; Widenhofer, R. ; Simon, B. ; Cave, N. ; Sanchez, H. ; Veeraraghavan, S. ; Mendicino, M. ; Yeargain, B.
Author_Institution
HiPerMOS Center, Motorola Inc., Austin, TX, USA
fYear
2000
fDate
13-15 June 2000
Firstpage
200
Lastpage
201
Abstract
Pulse width variation through open-ended chains in partially depleted SOI is investigated. Vdd impact on the pulse variation (either compression or stretching) is intensively studied, as well as temperature and illumination contributions. A physical model using well-known capacitive coupling, generation, and recombination concepts is proposed with experimental data.
Keywords
field effect integrated circuits; silicon-on-insulator; open-ended chain; partially depleted SOI circuit; propagation pulse width; Coupling circuits; Heating; Lighting; Low voltage; Propagation delay; Pulse circuits; Pulse compression methods; Space vector pulse width modulation; Temperature; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-6305-1
Type
conf
DOI
10.1109/VLSIT.2000.852825
Filename
852825
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