Development of porous silica ultra low-k films for 32 nm-node interconnects and beyond

Author

Yamazaki, T. ; Hirakawa, M. ; Nakayama, T. ; Murakami, H.

Author_Institution

Tsukuba Inst. for Super Mater., Susono Sect., ULVAC, Inc., Susono

fYear

2009

fDate

1-3 June 2009

Firstpage

119

Lastpage

121

Abstract

Porous silica spin-on dielectrics (SOD) films with low dielectric constant (k ~ 2.0), high Young´s modulus (E ~ 7.5 GPa), and small pores (~ 0.2 nm) were obtained only with ultraviolet (UV) curing within 1min at 350degC but without hydrophobic treatment process. Optimized UV curing condition and composition of precursor solution can give the low-k film applicable to 32 nm-node interconnect tech.nology and beyond.

Keywords

Young´s modulus; curing; heat treatment; integrated circuit interconnections; low-k dielectric thin films; permittivity; porous materials; silicon compounds; ultraviolet radiation effects; SiO₂; Young´s modulus; dielectric constant; interconnect technology; porous silica spin-on dielectric films; precursor solution composition; size 32 nm; temperature 350 degC; thermal treatment process; time 1 min; ultralow-k dielectric films; ultraviolet curing; Additives; Atmosphere; Curing; Dielectric constant; Dielectric films; Dielectric materials; Moisture; Optical films; Silicon compounds; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090358

Filename

5090358