Visible electroluminescence from MOS capacitors with Si-implanted SiO/sub 2/ under dynamic operation

Author

Matsuda, T. ; Takata, H. ; Kawabe, M. ; Ohzone, T.

Author_Institution

Dept. of Electron. & Informatics, Toyama Prefectural Univ., Japan

fYear

2001

fDate

2-5 Dec. 2001

Abstract

Electroluminescence (EL) under alternating-current (ac) operation is first reported for n/sup +/-polysilicon/SiO/sub 2//p-Si MOS capacitors with 50 nm Si-implanted SiO/sub 2/. Visible EL can be observed with the naked eye in the dark. The ac operation by pulse-wave distinctly enhances the EL intensity and its lifetime. The pulse frequency affects the EL spectrum and thus the EL color. A model of EL mechanism is proposed for the Si-implanted MOS EL device, which has a possibility of blue and UV light emission.

Keywords

MOS capacitors; electroluminescence; elemental semiconductors; ion implantation; silicon; silicon compounds; 50 nm; EL color; EL intensity; EL lifetime; MOS capacitors; Si-SiO/sub 2/-Si; UV light emission; alternating-current operation; blue light emission; dynamic operation; pulse frequency; pulse-wave operation; visible electroluminescence; Crystallization; Electroluminescence; Frequency; Glass; MOS capacitors; Nanocrystals; Nanoscale devices; Semiconductor films; Silicon compounds; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979458

Filename

979458