HBT MMICs for L band mobile radiocommunications

Author

Plouchart, J.O. ; Wang, H. ; Pinatel, C. ; Riet, M. ; Berdaguer, P. ; Dubon-Chevallier, C.

Author_Institution

France-Telecom, CNET, Bagneux, France

fYear

1994

fDate

22-25 May 1994

Firstpage

233

Lastpage

236

Abstract

L band HBT MMICs, such as VCOs, mixers, frequency dividers and power transistors, which are required in the handset of the DCS1800 mobile telecommunication system, have been fabricated on the same wafer using a simple HBT process. These different modules have been tested separately using an on-wafer RF probe. All circuits operate as predicted in the DCS1800 frequency range. Furthermore, the VCO has a large bandwidth of 400 MHz, the mixer provides positive conversion gain up to 18.5 GHz, and the power transistor exhibits an output power of 1.8 W with a power added efficiency of 60% at 1.8 GHz. These performances demonstrate that all the mobile terminal RF parts can be integrated into a single chip, when using HBT technology.<>

Keywords

MMIC; bipolar integrated circuits; frequency dividers; heterojunction bipolar transistors; microwave oscillators; mixers (circuits); mobile communication systems; power transistors; solid-state microwave devices; variable-frequency oscillators; 1.8 GHz; 1.8 W; 18.5 GHz; 400 MHz; 60 percent; DCS1800 mobile telecommunication system; HBT MMICs; L band; VCOs; bandwidth; conversion gain; frequency dividers; handset; mixers; mobile radiocommunications; on-wafer RF probe; output power; power added efficiency; power transistors; Bandwidth; Circuit testing; Frequency conversion; Heterojunction bipolar transistors; MMICs; Power transistors; Probes; Radio frequency; Telephone sets; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-1418-2

Type

conf

DOI

10.1109/MCS.1994.332096

Filename

332096