Poly Si-Si interfacial oxide ball-up mechanism and its control for 0.8 μm BiCMOS VLSIs

Author

Maeda, T. ; Higashizono, M. ; Momose, H. ; Matsunaga, J.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1989

fDate

18-19 Sep 1989

Firstpage

102

Lastpage

105

Abstract

Three samples with different thicknesses of polysilicon-silicon interfacial oxide were prepared. The influence of the interfacial oxide on the electrical characteristics of 0.8-μm BiCMOS VLSIs was studied. From the results, the maximum interfacial oxide thickness allowed for BiCMOS LSIs was determined. To control the interfacial oxide thickness, the ball-up mechanism was studied using HRXTEM combined with energy-dispersive X-ray spectroscopy measurements. The optimum heat treatment after emitter deposition to realize 0.5-μm BiCMOS VLSI was also determined

Keywords

BIMOS integrated circuits; VLSI; X-ray chemical analysis; X-ray spectra of atoms; elemental semiconductors; integrated circuit technology; semiconductor-insulator boundaries; silicon; transmission electron microscope examination of materials; 0.5 micron; 0.8 micron; BiCMOS VLSI; HRXTEM; Si; electrical characteristics; emitter deposition; energy-dispersive X-ray spectroscopy; optimum heat treatment; oxide ball-up mechanism; polysilicon-Si interfacial oxide; Annealing; BiCMOS integrated circuits; Contact resistance; Degradation; Electric resistance; Electric variables; Electrical resistance measurement; Heat treatment; Thickness control; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1989.69468

Filename

69468