Bonding pad models for silicon VLSI technologies and their effects on the noise figure of RF NPNs

Author

Camilleri, N. ; Kirchgessner, J. ; Costa, J. ; Ngo, D. ; Lovelace, D.

Author_Institution

SPS-ACT, Motorola Inc., Mesa, AZ, USA

fYear

1994

fDate

22-25 May 1994

Firstpage

225

Lastpage

228

Abstract

VLSI technologies such as BiCMOS and high speed ECL Bipolar are candidates for mixed mode applications which include RF receiver functions. In order for these silicon technologies to achieve low noise characteristics one needs to optimize both the active device and the signal path to the IC interface. Studies in the bonding pad parasitics indicate that these path losses can be Very significant. This paper models the bonding pads and presents measured vs. modeled noise figure data for several bonding pad configurations.<>

Keywords

BiCMOS integrated circuits; VLSI; bipolar integrated circuits; elemental semiconductors; equivalent circuits; losses; mixed analogue-digital integrated circuits; packaging; semiconductor device models; semiconductor device noise; silicon; BiCMOS; RF n-p-n devices; RF receiver functions; Si VLSI technologies; bonding pad models; bonding pad parasitics; high speed ECL bipolar; low noise characteristics; mixed mode applications; noise figure data; path losses; Atherosclerosis; BiCMOS integrated circuits; Bonding; Capacitance; Integrated circuit noise; Noise figure; Radio frequency; Resistors; Silicon; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-1418-2

Type

conf

DOI

10.1109/MCS.1994.332098

Filename

332098