Ka-band monolithic VCOs for low noise applications using GaInP/GaAs HBTs

Author

Guttich, U. ; Dieudonne, J.M. ; Riepe, K. ; Marten, A. ; Leier, H.

Author_Institution

Deutsche Aerospace AG, Ulm, Germany

fYear

1994

fDate

22-25 May 1994

Firstpage

165

Lastpage

168

Abstract

Design, monolithic GaInP/GaAs heterojunction bipolar transistors (HBTs) as the active device are described. The employed HBTs have an emitter area of 2/spl times/1.5 /spl mu/m/spl times/10 /spl mu/m and a self-aligned base. The varactor diode is formed from the base-collector junction of the HBT structure. The oscillators are realized in a common emitter configuration and show tuning ranges of about 1 GHz at center frequencies of 35 GHz, 37 GHz and 40 GHz. Best measured phase noise at 1 MHz off carrier is -107 dBc/Hz.<>

Keywords

III-V semiconductors; MMIC; bipolar integrated circuits; gallium arsenide; indium compounds; microwave oscillators; noise; varactors; variable-frequency oscillators; 1 MHz off carrier; 1.5 mum; 10 mum; 2 mum; 35 GHz; 37 GHz; 40 GHz; GaInP-GaAs; GaInP/GaAs HBTs; Ka-band monolithic VCOs; MMICs; active device; base-collector junction; center frequencies; common emitter configuration; emitter area; heterojunction bipolar transistors; low noise applications; oscillators; phase noise; self-aligned base; tuning ranges; varactor diode; Diodes; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Noise measurement; Oscillators; Phase measurement; Phase noise; Tuning; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-1418-2

Type

conf

DOI

10.1109/MCS.1994.332112

Filename

332112