Sensitivity analysis of 50-GHz MMIC-LNA on gate-recess depth with InAlAs/InGaAs/InP HEMTs

Author

Umeda, Y. ; Enoki, T. ; Ishii, Y.

Author_Institution

NTT LSI Labs., Kanagawa, Japan

fYear

1994

fDate

22-25 May 1994

Firstpage

157

Lastpage

160

Abstract

This paper proposes a new systematic approach to the noise-figure (NF) sensitivity analysis of MMIC low-noise amplifiers (LNA) regarding device structure parameters such as gate-recess variation for the first time. A full-monolithic uniplanar two-stage LNA with an extremely low NF of 2.8 dB at 50 GHz is fabricated and analyzed using this new method. A comparative study reveals that the gate recess variation in the fabricated HEMTs causes no substantial NF variation in the MMIC-LNAs.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; microwave amplifiers; sensitivity analysis; 50 GHz; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP HEMTs; MMIC low-noise amplifiers; MMIC-LNA; NF variation; device-structure parameters; fabricated HEMTs; gate-recess depth; gate-recess variation; noise-figure sensitivity analysis; sensitivity analysis; systematic approach; Circuit noise; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; MODFETs; Noise figure; Noise measurement; Sensitivity analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-1418-2

Type

conf

DOI

10.1109/MCS.1994.332114

Filename

332114