A novel MMIC biphase modulator with variable gain using enhancement-mode FETS suitable for 3 V wireless applications

Author

Goldfarb, M. ; Cole, J.B. ; Platzker, A.

Author_Institution

Res. Div., Raytheon Co., Lexington, MA, USA

fYear

1994

fDate

22-25 May 1994

Firstpage

99

Lastpage

102

Abstract

A circuit topology for realizing a BPSK (180 degree) modulator without the use of reactive phase determining networks is presented for the first time. This physically small circuit employs a trio of enhancement mode MESFETs which are uniquely configured to extend the upper frequency response of the design to in excess of 1.7 GHz. This approach is particularly noteworthy as it is implemented using less than 3 V dc and precludes the need for negative gate voltages making it attractive for use in wireless applications.<>

Keywords

MMIC; field effect integrated circuits; frequency response; microwave amplifiers; modulators; phase shift keying; power amplifiers; 1.7 GHz; 3 V; BPSK; MMIC biphase modulator; circuit topology; enhancement mode MESFETs; enhancement-mode FETS; physically small circuit; upper frequency response; variable gain; wireless applications; Bandwidth; Binary phase shift keying; Circuits; FETs; Frequency; Gain; MMICs; Parasitic capacitance; Phase modulation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-1418-2

Type

conf

DOI

10.1109/MCS.1994.332134

Filename

332134