• DocumentCode
    2167121
  • Title

    Study of the near Si-SiO2 interface trap layer using the charge pumping technique

  • Author

    Maneglia, Y. ; Bauza, D.

  • Author_Institution
    Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
  • Volume
    1
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    135
  • Abstract
    It is shown that the charge pumping technique allows the extraction of the Si-SiO2 interface depth trap concentration profile. This profile is found of the form Nt(x)=Nts exp(-x/d)+Nto where d is the distance in the oxide from the interface. The method is discussed as well as the expression of the trap density obtained
  • Keywords
    electron traps; elemental semiconductors; interface states; semiconductor-insulator boundaries; silicon; silicon compounds; Si-SiO2; Si-SiO2 interface depth trap concentration profile; charge pumping; Charge measurement; Charge pumps; Current measurement; Density measurement; Equations; Filling; Frequency; Linear predictive coding; MOS devices; MOSFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651565
  • Filename
    651565
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2167121